IGBT Transistors 40 Amps 1200V 2.5 Rds
IXGP20N120B: IGBT Transistors 40 Amps 1200V 2.5 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-220-3 | Packaging : | Tube |
| Technical/Catalog Information | IXGP20N120B |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 40A |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Power - Max | 190W |
| Mounting Type | Through Hole |
| Package / Case | TO-220 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGP20N120B IXGP20N120B |