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IXGP20N120BD1

IGBT Transistors 20 Amps 1200 V 3.4 Rds

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SeekIC No. : 00143083 Detail

IXGP20N120BD1: IGBT Transistors 20 Amps 1200 V 3.4 Rds

IXGP20N120BD1 Data Sheet

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Part Number:
IXGP20N120BD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-220-3


Parameters:

Technical/Catalog InformationIXGP20N120BD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Mounting Type-
Package / Case-
Packaging-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGP20N120BD1
IXGP20N120BD1



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