IGBT Transistors 4 Amps 1000V 2.7 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1000 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-220-3 | Packaging : | Tube |
| Technical/Catalog Information | IXGP2N100 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 4A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 2A |
| Power - Max | 25W |
| Mounting Type | Through Hole |
| Package / Case | TO-220 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGP2N100 IXGP2N100 |