IXGR32N60CD1

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : ISOPLUS247-3


Features:

• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
   - drive simplicity


Application

• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M	600 600	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
Ic25 Ic90 ICM	TC = 25°C TC = 90°C TC = 25°C 1 ms	45 28 120	A A A
SSOA (RBSOA)	VGE= 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 100 H	ICM = 64 @ 0.8 VCES	V/ns
Pc	TC = 25°C	140	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C °C
VISOL	50/60 Hz, RMS t = 1 min leads-to housing	2500	V~
Weight	TO-268 TO-247 AD	4 6	g g

Parameters:

Technical/Catalog Information	IXGR32N60CD1
Vendor	IXYS
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXGR32N60CD1 IXGR32N60CD1