IGBT Transistors 66 Amps 600V 1.8 Rds
IXGR39N60BD1: IGBT Transistors 66 Amps 600V 1.8 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | ISOPLUS 247-3 | Packaging : | Tube |
| Technical/Catalog Information | IXGR39N60BD1 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 66A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 35A |
| Power - Max | 140W |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247? |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGR39N60BD1 IXGR39N60BD1 |