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IXGT24N170

IGBT Transistors 24 Amps 1200 V 3.3 V Rds

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SeekIC No. : 00143029 Detail

IXGT24N170: IGBT Transistors 24 Amps 1200 V 3.3 V Rds

IXGT24N170 Data Sheet

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Part Number:
IXGT24N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 3.3 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : TO-268-3
Collector-Emitter Saturation Voltage : 3.3 V


Features:

 International standard packages
   JEDEC TO-268 and
   JEDEC TO-247 AD
 High current handling capability
 MOS Gate turn-on
   - drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0 flammability classification


Application

 Capacitor discharge & pulser circuits
 AC motor speed control
 DC servo and robot drives
DC choppers
 Uninterruptible power supplies (UPS)
 Switched-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions
Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
VGES
VGEM		 Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM		 TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
50
24
150
A
A
A
SSOA
(RBSOA)		 VGE = 15 V, TVJ = 125°C, RG = 5 Ω
Clamped inductive load
ICM = 50
@ 0.8 VCES
A
PC TC = 25°C
250
W
TJ
TJM
Tstg		  
-55 ... +150
             150
-55 ... +150
°C
°C
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
°C
°C
Md Mounting torque (M3)
1.13/10Nm/lb.in.
Weight

TO-247 AD
TO-268
6
4
g
g



Parameters:

Technical/Catalog InformationIXGT24N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 24A
Power - Max250W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT24N170
IXGT24N170



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