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IXGT28N120B

IGBT Transistors 50 Amps 1200V 3.5 V Rds

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SeekIC No. : 00142903 Detail

IXGT28N120B: IGBT Transistors 50 Amps 1200V 3.5 V Rds

IXGT28N120B Data Sheet

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Part Number:
IXGT28N120B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3.5 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Box    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3.5 V
Package / Case : TO-268-3
Packaging : Box


Features:

· High Voltage IGBT for resonant power supplies
  - Induction heating
  - Rice cookers
· International standard packages JEDEC TO-268 and JEDEC TO-247 AD
·Low switching losses, low V(sat)
· MOS Gate turn-on
   - drive simplicity


Application

·High power density
·Suitable for surface mounting
·Easy to mount with 1 screw, (isolated mounting screw hole)


Parameters:

Technical/Catalog InformationIXGT28N120B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 28A
Power - Max250W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingBox
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT28N120B
IXGT28N120B



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