IGBT Transistors 12 Amps 900V 3 Rds
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Features: • Square RBSOA• High current handling capability• MOS Gate turn-on for...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 900 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | PLUS 247-3 | Packaging : | Tube |
| Technical/Catalog Information | IXGX12N90C |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGX12N90C IXGX12N90C |