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IXKC20N60C

MOSFET 14 Amps 600V 0.19 Rds

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IXKC20N60C: MOSFET 14 Amps 600V 0.19 Rds

IXKC20N60C Data Sheet

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Part Number:
IXKC20N60C
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/8

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 190 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 190 mOhms
Package / Case : ISOPLUS 220


Features:

·  Silicon chip on Direct-Copper-Bond substrate
     - High power dissipation
     - Isolated mounting surface
     - 2500V electrical isolation
·  3RD generation CoolMOS power MOSFET
     - High blocking capability
     - Low on resistance
     - Avalanche rated for unclamped inductive switching (UIS)
·  Low thermal resistance due to reduced chip thickness
·  Low drain to tab capacitance(<30pF)




Application

·  Switched Mode Power Supplies (SMPS)
·  Uninterruptible Power Supplies (UPS)
·  Power Factor Correction (PFC)
·  Welding
·  Inductive Heating


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
 TJ = 25to 150
600
V
VGS
 Continuous
±20
V
IC25
IC90
TC = 25; Note 1
TC = 90; Note 1
14
10
A
A
ID(RMS)
 Package lead current limit
45
A
EAS
EAR
Io = 10A, TC = 25
Io = 20A
690
1
mJ
mJ
PD
 TC = 25
125
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +125


TL
1.6 mm (0.063 in.) from case for 10 s
300
VISOL
 RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
FC
 Mounting force 11
11...65 / 2.4...11
N/lb
Weight
  
3
g






Description






Parameters:

Technical/Catalog InformationIXKC20N60C
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs190 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKC20N60C
IXKC20N60C



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