IXKN40N60C

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Drain-Source Breakdown Voltage : 600 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

· miniBLOC package
    - Electrically isolated copper base
    - Low coupling capacitance to the heatsink for reduced EMI
    - High power dissipation due to AlN ceramic substrate
    - International standard package SOT-227
    - Easy screw assembly
· Fast CoolMOS power MOSFET
    - High blocking capability
    - Low on resistance
    - Avalanche rated for unclamped inductive switching (UIS)
    - Low thermal resistance due to reduced chip thickness
· Enhanced total power density


Application

·Switched mode power supplies (SMPS)
·Uninterruptible power supplies (UPS)
·Power factor correction (PFC)
·Welding
·Inductive heating


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS	TJ = 25°C to 150°C	600	V
VGS		±20	V
ID25 Ic90	TC = 25°C TC = 90°C	40 27	A A
EAR EAS	ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive	1 1.8	mJ J
dv/dt	VDS VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM	6	V/ns
PD	TC = 25°C	290	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
VISOL	50/60 Hz, RMS IISOL1 mA	2500	V~
Md	Mounting torque Terminal connetion torque (M4)	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.

Parameters:

Technical/Catalog Information	IXKN40N60C
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	70 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Tube
Gate Charge (Qg) @ Vgs	250nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXKN40N60C IXKN40N60C