IXKN75N60C

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.036 Ohms
Continuous Drain Current : 75 A
Configuration : Single Dual Source
Package / Case : SOT-227B


Features:

·miniBLOC package
   - Electrically isolated copper base
   - Low coupling capacitance to the heatsink for reduced EMI
   - High power dissipation due to AlN ceramic substrate
   - International standard package SOT-227
   - Easy screw assembly
· fast CoolMOS power MOSFET - 2^nd generation
    - High blocking capability
    - Low on resistance
    - Avalanche rated for unclamped inductive switching (UIS)
    - Low thermal resistance due to reduced chip thickness
·Enhanced total power density


Application

·Switched mode power supplies (SMPS)
·Uninterruptible power supplies (UPS)
·Power factor correction (PFC)
·Welding
·Inductive heating


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS	TJ = 25°C to 150°C	600	V
VGS		±20	V
ID25 ID90	TC = 25°C TC = 90°C	75 50	A A
dv/dt	VDS VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM	6	V/ns
PD	TC = 25°C	290	W
EAR EAS	ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive	1 1.8	mJ J

Parameters:

Technical/Catalog Information	IXKN75N60C
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	36 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Tube
Gate Charge (Qg) @ Vgs	500nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXKN75N60C IXKN75N60C