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IXKR25N80C

MOSFET 25 Amps 800V

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SeekIC No. : 00151279 Detail

IXKR25N80C: MOSFET 25 Amps 800V

IXKR25N80C Data Sheet

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Part Number:
IXKR25N80C
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 125 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 125 mOhms
Drain-Source Breakdown Voltage : 800 V
Package / Case : ISOPLUS 247


Parameters:

Technical/Catalog InformationIXKR25N80C
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs150 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs355nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKR25N80C
IXKR25N80C



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