IGBT Transistors 10 Amps 600V 2.5 Rds
IXSP10N60B2D1: IGBT Transistors 10 Amps 600V 2.5 Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 100 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220-3 |
| Packaging : | Tube |
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
600 600 |
V V |
| VGES VGEM |
Continuous Transient |
±20 ±30 |
V |
| IC25 IC110 IF(110) ICM |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
20 10 11 30 |
A |
| SSOA (RBSOA) |
VGE = 15 V, TJ = 125°C, RG = 2.7 Clamped inductive load, VCC= 0.8 VCES |
ICM =20 @ 0.8 VCES |
A |
| tSC (SCSOA) |
VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 ?, non repetitive |
10 | s |
| PC | TC = 25°C | 100 | W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body t = 10s |
300 250 |
°C °C | |
| Md | Mounting torque | 1.13/10 | Nm/lb.in. |
| Weight | 6 | g | |
| Technical/Catalog Information | IXSP10N60B2D1 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Power - Max | 100W |
| Mounting Type | Through Hole |
| Package / Case | TO-220AB |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXSP10N60B2D1 IXSP10N60B2D1 |