IXT-1-1N100S1-TR

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 1.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Power - Max: -
Supplier Device Package: 8-SOIC
Drain to Source Voltage (Vdss): 1000V (1kV)
Manufacturer: IXYS
Package / Case: 8-SOIC


Parameters:

Technical/Catalog Information	IXT-1-1N100S1-TR
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	8-SOIC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXT 1 1N100S1 TR IXT11N100S1TR