MOSFET 0.75 Amps 1000V 15 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.75 A | ||
| Resistance Drain-Source RDS (on) : | 15 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263AA | Packaging : | Tube |
| Technical/Catalog Information | IXTA05N100 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 750mA |
| Rds On (Max) @ Id, Vgs | 17 Ohm @ 375mA, 10V |
| Input Capacitance (Ciss) @ Vds | 260pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.8nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTA05N100 IXTA05N100 |