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IXTA110N055T7

MOSFET 110 Amps 55V 6.7 Rds

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SeekIC No. : 00154221 Detail

IXTA110N055T7: MOSFET 110 Amps 55V 6.7 Rds

IXTA110N055T7 Data Sheet

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Part Number:
IXTA110N055T7
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 110 A Resistance Drain-Source RDS (on) : 0.007 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT Package / Case : TO-263
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.007 Ohms


Parameters:

Technical/Catalog InformationIXTA110N055T7
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs7 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3080pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs67nC @ 10V
Package / CaseD²Pak, TO-263 (6 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA110N055T7
IXTA110N055T7



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