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IXTA14N60P: MOSFET 14.0 Amps 600 V 0.55 Ohm Rds

IXTA14N60P Data Sheet

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Part Number:: IXTA14N60P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	14 A
Resistance Drain-Source RDS (on) :	0.55 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.55 Ohms
Continuous Drain Current : 14 A

Parameters:

Technical/Catalog Information	IXTA14N60P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	550 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA14N60P IXTA14N60P

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IXTA14N60P

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