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IXTA180N10T7: MOSFET 180 Amps 100V 6.1 Rds

IXTA180N10T7 Data Sheet

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Part Number:: IXTA180N10T7
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2025/12/4

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Continuous Drain Current :	180 A	Resistance Drain-Source RDS (on) :	0.0064 Ohms
Configuration :	Single Quint Source	Maximum Operating Temperature :	+ 175 C
Mounting Style :	SMD/SMT	Package / Case :	TO-263
Packaging :	Tube

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0064 Ohms
Package / Case : TO-263
Continuous Drain Current : 180 A
Configuration : Single Quint Source

Parameters:

Technical/Catalog Information	IXTA180N10T7
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	180A
Rds On (Max) @ Id, Vgs	6.4 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	6900pF @ 25V
Power - Max	480W
Packaging	Tube
Gate Charge (Qg) @ Vgs	151nC @ 10V
Package / Case	D²Pak, TO-263 (6 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA180N10T7 IXTA180N10T7

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IXTA180N10T7

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