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IXTA182N055T: MOSFET 182 Amps 55V 4.4 Rds

IXTA182N055T Data Sheet

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Part Number:: IXTA182N055T
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/4/28

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Continuous Drain Current :	182 A	Resistance Drain-Source RDS (on) :	0.005 Ohms
Configuration :	Single	Maximum Operating Temperature :	+ 175 C
Mounting Style :	SMD/SMT	Package / Case :	TO-263
Packaging :	Tube

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.005 Ohms
Continuous Drain Current : 182 A

Parameters:

Technical/Catalog Information	IXTA182N055T
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	182A
Rds On (Max) @ Id, Vgs	5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	4850pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	114nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA182N055T IXTA182N055T

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