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IXTA3N120

MOSFET 3 Amps 1200V 4.5 Rds

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SeekIC No. : 00150983 Detail

IXTA3N120: MOSFET 3 Amps 1200V 4.5 Rds

IXTA3N120 Data Sheet

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Part Number:
IXTA3N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-263
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms
Drain-Source Breakdown Voltage : 1100 V


Features:

· International standard packages
· Low RDS (on)
· Rated for unclamped Inductive load Switching (UIS)
· Molding epoxies meet UL 94 V-0 flammability classification


Application

· Easy to mount
· Space savings
· High power density


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 3N120 1200
3N110 1100
3N120 1200
3N110 1100		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C		 3
12
3		 A
A
A
EAR
EAS		 TC = 25°C 20
700		 mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2 Ω		 5 V/ns
PD TC = 25°C 25 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220
TO-263		 4
2		 g
g



Parameters:

Technical/Catalog InformationIXTA3N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA3N120
IXTA3N120



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