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IXTA50N20P

MOSFET 50 Amps 200V 0.06 Rds

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SeekIC No. : 00154204 Detail

IXTA50N20P: MOSFET 50 Amps 200V 0.06 Rds

IXTA50N20P Data Sheet

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Part Number:
IXTA50N20P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.06 Ohms


Parameters:

Technical/Catalog InformationIXTA50N20P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs60 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 2720pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA50N20P
IXTA50N20P



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