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IXTA6N50P

MOSFET 6 Amps 500V 1.1 Ohms Rds

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SeekIC No. : 00154413 Detail

IXTA6N50P: MOSFET 6 Amps 500V 1.1 Ohms Rds

IXTA6N50P Data Sheet

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Part Number:
IXTA6N50P
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 1.1 Ohms


Parameters:

Technical/Catalog InformationIXTA6N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs1.1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 740pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs14.6nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA6N50P
IXTA6N50P



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