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IXTF200N10T

MOSFET 200 Amps 100V 5.4 Rds

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SeekIC No. : 00154315 Detail

IXTF200N10T: MOSFET 200 Amps 100V 5.4 Rds

IXTF200N10T Data Sheet

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Part Number:
IXTF200N10T
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 120 A Resistance Drain-Source RDS (on) : 0.0063 Ohms
Configuration : Single Dual Drain Dual Source Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT Package / Case : ISOPLUS i4-Pac
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 120 A
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0063 Ohms
Configuration : Single Dual Drain Dual Source
Package / Case : ISOPLUS i4-Pac


Parameters:

Technical/Catalog InformationIXTF200N10T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C90A
Rds On (Max) @ Id, Vgs7 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 9400pF @ 25V
Power - Max156W
PackagingTube
Gate Charge (Qg) @ Vgs152nC @ 10V
Package / CaseISOPLUS i4-PAC?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTF200N10T
IXTF200N10T



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