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IXTF280N055T

MOSFET 280 Amps 55V 2.8 Rds

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SeekIC No. : 00153929 Detail

IXTF280N055T: MOSFET 280 Amps 55V 2.8 Rds

IXTF280N055T Data Sheet

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Part Number:
IXTF280N055T
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 160 A Resistance Drain-Source RDS (on) : 0.004 Ohms
Configuration : Single Dual Drain Dual Source Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT Package / Case : ISOPLUS i4-Pac
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 0.004 Ohms
Configuration : Single Dual Drain Dual Source
Package / Case : ISOPLUS i4-Pac


Parameters:

Technical/Catalog InformationIXTF280N055T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs4 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 9800pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseISOPLUS i4-PAC?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTF280N055T
IXTF280N055T



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