MOSFET 280 Amps 55V 2.8 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V |
Continuous Drain Current : | 160 A | Resistance Drain-Source RDS (on) : | 0.004 Ohms |
Configuration : | Single Dual Drain Dual Source | Maximum Operating Temperature : | + 175 C |
Mounting Style : | SMD/SMT | Package / Case : | ISOPLUS i4-Pac |
Packaging : | Tube |
Technical/Catalog Information | IXTF280N055T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 160A |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 50A, 10V |
Input Capacitance (Ciss) @ Vds | 9800pF @ 25V |
Power - Max | 200W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 200nC @ 10V |
Package / Case | ISOPLUS i4-PAC? |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTF280N055T IXTF280N055T |