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IXTH110N10L2

MOSFET N-CH 100V 110A TO-247

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SeekIC No. : 003434166 Detail

IXTH110N10L2: MOSFET N-CH 100V 110A TO-247

IXTH110N10L2 Data Sheet

floor Price/Ceiling Price

US $ 6.83~6.83 / Piece | Get Latest Price
Part Number:
IXTH110N10L2
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~60
  • Unit Price
  • $6.83
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: Linear L2™ Manufacturer: IXYS
Frequency : 0.1 GHz to 2.6 GHz FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 110A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) @ Vgs: 260nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 10500pF @ 25V
Power - Max: 600W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: -
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 110A
Gate Charge (Qg) @ Vgs: 260nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247
Manufacturer: IXYS
Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
Series: Linear L2™
Input Capacitance (Ciss) @ Vds: 10500pF @ 25V
Power - Max: 600W


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