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IXTH12N100Q

MOSFET 12 Amps 1000V 1.05 Rds

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SeekIC No. : 00159164 Detail

IXTH12N100Q: MOSFET 12 Amps 1000V 1.05 Rds

IXTH12N100Q Data Sheet

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Part Number:
IXTH12N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Drain-Source Breakdown Voltage : 1 KV Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1050 mOhms Configuration : Single
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Mounting Style :
Configuration : Single
Packaging : Tube
Continuous Drain Current : 12 A
Package / Case : TO-247
Drain-Source Breakdown Voltage : 1 KV
Resistance Drain-Source RDS (on) : 1050 mOhms


Parameters:

Technical/Catalog InformationIXTH12N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds -
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH12N100Q
IXTH12N100Q



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