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IXTH13N110

MOSFET 13 Amps 1100V 0.92 Rds

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SeekIC No. : 00159280 Detail

IXTH13N110: MOSFET 13 Amps 1100V 0.92 Rds

IXTH13N110 Data Sheet

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Part Number:
IXTH13N110
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.8 Ohms
Package / Case : TO-247AD
Drain-Source Breakdown Voltage : 1100 V


Features:

·International standard package JEDEC TO-247 AD
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Fast switching times


Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1100
1100		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25°C
TC = 25°C, pulse width limited by TJM		 13
52		 A
A
A
PD TC = 25°C 360 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight   6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXTH13N110
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1100V (1.1kV)
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs920 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5650pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs195nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH13N110
IXTH13N110



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