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IXTH14N100

MOSFET 14 Amps 1000V 0.82 Rds

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SeekIC No. : 00159079 Detail

IXTH14N100: MOSFET 14 Amps 1000V 0.82 Rds

IXTH14N100 Data Sheet

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Part Number:
IXTH14N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.82 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 14 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-247AD
Resistance Drain-Source RDS (on) : 0.82 Ohms


Features:

·International standard package JEDEC TO-247 AD
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Fast switching times


Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 1000
1000		 V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25
TC = 25, pulse width limited by TJM		 14
56		 A
A
PD TC = 25 300 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150

Md Mounting torque, TO-247 1.13/10 Nm/lb.in.
Weight   6 g
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)		 300
 °C



Parameters:

Technical/Catalog InformationIXTH14N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs820 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5650pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs195nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH14N100
IXTH14N100



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