MOSFET 14 Amps 800V 0.7 Rds
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Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 14 A | ||
| Resistance Drain-Source RDS (on) : | 0.7 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247AD | Packaging : | Tube |
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
800 800 |
V |
| VGES VGEM |
Transient | ±20 ±30 |
V V |
| ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
14 56 |
A A |
| PD | TC = 25 | 300 | W |
| TJ TJM Tstg |
-50 ... +150 150 -50 ... +150 |
°C °C °C | |
| Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C | |
| Md | Mounting torque | 1.13/10 | Nm/lb.in. |
| Weight | 6 | g | |
| Technical/Catalog Information | IXTH14N80 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 700 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 4500pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | TO-247AD |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTH14N80 IXTH14N80 |