MOSFET 150 Amps 17V
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Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 175 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 150 A | ||
| Resistance Drain-Source RDS (on) : | 12 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |
| Technical/Catalog Information | IXTH150N17T |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 175V |
| Current - Continuous Drain (Id) @ 25° C | 150A |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 9800pF @ 25V |
| Power - Max | 830W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 155nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTH150N17T IXTH150N17T |