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IXTH20N50D

MOSFET 20 Amps 500V 0.33 Rds

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SeekIC No. : 00150952 Detail

IXTH20N50D: MOSFET 20 Amps 500V 0.33 Rds

IXTH20N50D Data Sheet

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Part Number:
IXTH20N50D
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.33 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.33 Ohms
Package / Case : TO-247AD


Parameters:

Technical/Catalog InformationIXTH20N50D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs330 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs125nC @ 10V
Package / CaseTO-247
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH20N50D
IXTH20N50D



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