Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH)- easy to drive and to protect· Fast switching timesSpecifications Symbol Test Conditions Maximum Ratings VCESVCGR TJ = 25 to 150 600TJ= ...
IXTH35N30: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH)- easy to drive and to protect· Fast switching ti...
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Features: • International standard package JEDEC TO-247 AD• Low RDS (on) HDMOSTM proce...
SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
1000 1000 |
V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
35 40 140 160 |
A A A A |
PD | TC = 25 | 300 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
Md | Mounting torque, TO-247 | 1.13/10 | Nm/lb.in. |
Weight | TO-204 TO-247 |
18 6 |
g g |
Max. Lead Temperature for Soldering (1.6mm from case for 10s) |
300 |
°C |
·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers
IXTH35N30