IXTH50P10

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.055 Ohms
Continuous Drain Current : - 50 A
Package / Case : TO-247AD


Features:

• International standard package JEDEC TO-247 AD
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (<5 nH)
   - easy to drive and to protect


Application

• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment


Specifications

Symbol	Test Conditions	Maximum	Ratings
VCES VCGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M	-200 -200	V V
VGES VGEM	Continuous Transient	±20 ±30	V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM	-50 -200 -50	A A A
EAR	TC = 25°C	30	mJ
PD	TC = 25°C	300	W
TJ TJM Tstg	1.6 mm (0.063 in) from case for 10 s	-55 ... +150 150 -55 ... +150	°C °C °C
TL	Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s	300	°C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight		6	g

Parameters:

Technical/Catalog Information	IXTH50P10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	55 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4200pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH50P10 IXTH50P10