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IXTH67N10

MOSFET 67 Amps 100V 0.025 Rds

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SeekIC No. : 00159096 Detail

IXTH67N10: MOSFET 67 Amps 100V 0.025 Rds

IXTH67N10 Data Sheet

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Part Number:
IXTH67N10
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 67 A
Resistance Drain-Source RDS (on) : 0.025 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.025 Ohms
Continuous Drain Current : 67 A
Package / Case : TO-247AD


Parameters:

Technical/Catalog InformationIXTH67N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C67A
Rds On (Max) @ Id, Vgs25 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH67N10
IXTH67N10



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