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IXTH6N120

MOSFET 6 Amps 1200V 2.700 Rds

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SeekIC No. : 00154516 Detail

IXTH6N120: MOSFET 6 Amps 1200V 2.700 Rds

IXTH6N120 Data Sheet

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Part Number:
IXTH6N120
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 2.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Packaging : Bulk
Drain-Source Breakdown Voltage : 1200 V
Resistance Drain-Source RDS (on) : 2.4 Ohms
Package / Case : TO-247AD


Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Parameters:

Technical/Catalog InformationIXTH6N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs2.6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1950pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH6N120
IXTH6N120



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