IXTH6N80A

MOSFET 6 Amps 800 V 1.4 W Rds

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SeekIC No. : 00154546 Detail

IXTH6N80A: MOSFET 6 Amps 800 V 1.4 W Rds

floor Price/Ceiling Price

Part Number:
IXTH6N80A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.4 Ohms
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-247AD


Parameters:

Technical/Catalog InformationIXTH6N80A
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH6N80A
IXTH6N80A



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