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IXTH96N25T

MOSFET 96 Amps 250V 36 Rds

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SeekIC No. : 00154224 Detail

IXTH96N25T: MOSFET 96 Amps 250V 36 Rds

IXTH96N25T Data Sheet

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Part Number:
IXTH96N25T
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 96 A
Resistance Drain-Source RDS (on) : 0.029 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Package / Case : TO-247
Continuous Drain Current : 96 A
Resistance Drain-Source RDS (on) : 0.029 Ohms


Parameters:

Technical/Catalog InformationIXTH96N25T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C96A
Rds On (Max) @ Id, Vgs29 mohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6100pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH96N25T
IXTH96N25T



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