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IXTK200N10P

MOSFET 200 Amps 100V 0.0075 Rds

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SeekIC No. : 00151057 Detail

IXTK200N10P: MOSFET 200 Amps 100V 0.0075 Rds

IXTK200N10P Data Sheet

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Part Number:
IXTK200N10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 200 A
Resistance Drain-Source RDS (on) : 0.0075 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-264
Continuous Drain Current : 200 A
Resistance Drain-Source RDS (on) : 0.0075 Ohms


Features:

· International standard packages
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
     - easy to drive and to protect




Specifications

Symbol Test Conditions

Maximum

Ratings

VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M

100
100

V
V

VGSM  

±20

V

ID25
ID(RMS)
IDM		 TC = 25
External lead current limit
TC = 25, pulse width limited by TJM

200
75
400

A
A
A

IAR
EAR
EAS		 TC = 25
TC = 25
TC = 25

60
100
4

A
mJ
J

dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150, RG = 4

10

V/ns

PD TC = 25

800

W

TJ
TJM
Tstg		  

-55 ... +175
175
-55 ... +150



TL 1.6 mm (0.063 in) from case for 10 s

300

Md Mounting force

1.13/10

Nm/lb.in.

Weight  

10

g




Parameters:

Technical/Catalog InformationIXTK200N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C200A
Rds On (Max) @ Id, Vgs7.5 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7600pF @ 25V
Power - Max800W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK200N10P
IXTK200N10P



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