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IXTK80N25

MOSFET 80 Amps 250V 0.033 Rds

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SeekIC No. : 00159133 Detail

IXTK80N25: MOSFET 80 Amps 250V 0.033 Rds

IXTK80N25 Data Sheet

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Part Number:
IXTK80N25
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.033 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 250 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 0.033 Ohms
Package / Case : TO-264AA


Parameters:

Technical/Catalog InformationIXTK80N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs33 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 25V
Power - Max540W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTK80N25
IXTK80N25



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