IXTL2x180N10T

MOSFET 180 Amps 100V 6.1 Rds

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SeekIC No. : 00154408 Detail

IXTL2x180N10T: MOSFET 180 Amps 100V 6.1 Rds

floor Price/Ceiling Price

Part Number:
IXTL2x180N10T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 200 A Resistance Drain-Source RDS (on) : 0.0074 Ohms
Configuration : Dual Common Gate Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT Package / Case : ISOPLUS i5-Pak
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Continuous Drain Current : 200 A
Resistance Drain-Source RDS (on) : 0.0074 Ohms
Configuration : Dual Common Gate
Package / Case : ISOPLUS i5-Pak


Parameters:

Technical/Catalog InformationIXTL2X180N10T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs7.4 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 6900pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs151nC @ 10V
Package / CaseISOPLUSi5-Pak?
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTL2X180N10T
IXTL2X180N10T



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