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IXTM11N80

Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) -easy to drive and to protect· Fast switching timesApplication·Switch-mode and resonant-mode power supplies·Motor controls·Uninterruptible Power Sup...

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SeekIC No. : 004381680 Detail

IXTM11N80: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) -easy to drive and to protect· Fast switching ti...

IXTM11N80 Data Sheet

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Part Number:
IXTM11N80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
    - easy to drive and to protect
· Fast switching times


Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 800
800		 V
VGES
VGEM		 Transient ±20
±30		 V
V
ID25
IDM		 TC = 25
TC = 25, pulse width limited by TJM		 11
13
44
52		 A
A
PD TC = 25 300 W
TJ
TJM
Tstg		   -50 ... +150
150
-50 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204
TO-247		 18
6		 g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



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