IXTM40N30

Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH)- easy to drive and to protect· Fast switching timesSpecifications Symbol Test Conditions Maximum Ratings VCESVCGR TJ = 25 to 150 600TJ= ...

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SeekIC No. : 004381685 Detail

IXTM40N30: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH)- easy to drive and to protect· Fast switching ti...

floor Price/Ceiling Price

Part Number:
IXTM40N30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Description



Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
    - easy to drive and to protect
· Fast switching times



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M
1000
1000
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25
TC = 25, pulse width limited by TJM
35
40
140
160
A
A
A
A
PD TC = 25 300 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150


Md Mounting torque, TO-247 1.13/10 Nm/lb.in.
Weight TO-204
TO-247
18
6
g
g
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
300
°C



Description

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers

IXTM40N30




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