MOSFET 0.1 Amps 1000V 110 Rds
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A | ||
| Resistance Drain-Source RDS (on) : | 90 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
1000 1000 |
V V |
| VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
| ID25 IDM |
TC = 25°C TC = 25°C, pulse width limited by TJM |
100 400 |
A A |
| PD | TC = 25°C TA = 25°C |
25 1.1 |
W W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| TL | 1.6 mm (0.063 in.) from case for 10 s | 300 | °C |
| Technical/Catalog Information | IXTP01N100D |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 100mA |
| Rds On (Max) @ Id, Vgs | 110 Ohm @ 50mA, 0V |
| Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
| Power - Max | 1.1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220 |
| FET Feature | Depletion Mode |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTP01N100D IXTP01N100D |