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IXTP05N100

MOSFET 0.75 Amps 1000V 15 Rds

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SeekIC No. : 00154385 Detail

IXTP05N100: MOSFET 0.75 Amps 1000V 15 Rds

IXTP05N100 Data Sheet

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Part Number:
IXTP05N100
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.75 A
Resistance Drain-Source RDS (on) : 15 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 15 Ohms
Drain-Source Breakdown Voltage : 1000 V
Continuous Drain Current : 0.75 A


Parameters:

Technical/Catalog InformationIXTP05N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C750mA
Rds On (Max) @ Id, Vgs17 Ohm @ 375mA, 10V
Input Capacitance (Ciss) @ Vds 260pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs7.8nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP05N100
IXTP05N100



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