IXTP08N120P

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Power - Max: 50W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 800mA
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: IXYS
Supplier Device Package: TO-220
Series: Polar™
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Rds On (Max) @ Id, Vgs: 25 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds: 333pF @ 25V


Parameters:

Technical/Catalog Information	IXTP08N120P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	800mA
Rds On (Max) @ Id, Vgs	25 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	333pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTP08N120P IXTP08N120P