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IXTP110N055T2

MOSFET 110 Amps 55V 0.0066 Rds

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IXTP110N055T2: MOSFET 110 Amps 55V 0.0066 Rds

IXTP110N055T2 Data Sheet

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Part Number:
IXTP110N055T2
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.0066 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Packaging : Bulk
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.0066 Ohms


Parameters:

Technical/Catalog InformationIXTP110N055T2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs6.6 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3060pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs57nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP110N055T2
IXTP110N055T2



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