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IXTP180N055T

MOSFET 180 Amps 55V 0.004 Ohm Rds

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SeekIC No. : 00153884 Detail

IXTP180N055T: MOSFET 180 Amps 55V 0.004 Ohm Rds

IXTP180N055T Data Sheet

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Part Number:
IXTP180N055T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Packaging : Tube    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Tube


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Specifications

Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT 0.5 to 4.6 V
Voltage VCC Supply Relative to VSS VCC 0.5 to 4.6 V
Short Circuit Output Current IOS 50 mA
Power Dissipation PD 8 W
Operating Temperature Top 0 to 70 °C
Storage Temperature Tstg 40 to 125 °C

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Parameters:

Technical/Catalog InformationIXTP180N055T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds -
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP180N055T
IXTP180N055T



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