MOSFET 180 Amps 85V 5.5 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 85 V |
| Continuous Drain Current : | 180 A | Resistance Drain-Source RDS (on) : | 0.0055 Ohms |
| Configuration : | Single | Maximum Operating Temperature : | + 175 C |
| Mounting Style : | Through Hole | Package / Case : | TO-220 |
| Packaging : | Tube |
| Technical/Catalog Information | IXTP180N085T |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 85V |
| Current - Continuous Drain (Id) @ 25° C | 180A |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 7500pF @ 25V |
| Power - Max | 430W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXTP180N085T IXTP180N085T |