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IXTP1R6N50P

MOSFET 1.6 Amps 500 V 6 Ohm Rds

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SeekIC No. : 00153963 Detail

IXTP1R6N50P: MOSFET 1.6 Amps 500 V 6 Ohm Rds

IXTP1R6N50P Data Sheet

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Part Number:
IXTP1R6N50P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.6 A
Resistance Drain-Source RDS (on) : 6.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 1.6 A
Resistance Drain-Source RDS (on) : 6.5 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
  - easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 MΩ		 500
500		 V
V
VGS
VGSM		 Continuous
Transient		 ±30
±40		 V
V
ID25
IDM		 TC = 25
TC = 25, pulse width limited by TJM		 1.6
2.5		 A
A
IAR
EAR
EAS		 TC = 25
TC = 25
TC = 25		 1.6
5
75		 A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150, RG = 50 Ω		 10 V/ns
PD TC = 25 43 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150

TL 1.6 mm (0.062 in.) from case for 10s
Maximum tab temperature for soldering
TO-252 package for 10s		 300
260
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-252
TO-220		 0.8
4		 g
g



Parameters:

Technical/Catalog InformationIXTP1R6N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs6.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 25V
Power - Max43W
PackagingTube
Gate Charge (Qg) @ Vgs3.9nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP1R6N50P
IXTP1R6N50P



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