Position: Home  > All Categories> Integrated Circuits (ICs) > IXTP2N80

IXTP2N80

MOSFET 2 Amps 800V 6.2 Rds

product image

IXTP2N80 Picture
See larger image
SeekIC No. : 00153955 Detail

IXTP2N80: MOSFET 2 Amps 800V 6.2 Rds

IXTP2N80 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTP2N80
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/1

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 6.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB
Packaging : Bulk
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 6.2 Ohms


Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
    - easy to drive and to protect
· Fast switching times


Application

· Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 800
800		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25°C
TC = 25°C, pulse width limited by TJM		 2
8		 A
A
IAR
EAR
EAS		 TC = 25°C
TC = 25°C		 2
6
200		 A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 18 Ω		 5 V/ns
PD TC = 25°C 54 w
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   4 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXTP2N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs6.2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max54W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP2N80
IXTP2N80



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Undefined Category
VI-B63-IU
X27 589
RF and RFID
X3C26P1-30S
1P620S
Optoelectronics
SFH7770
TLP423J
Crystals and Oscillators
WT325BI0030.000000
2SB49
Optical Inspection Equipment
AA924
A21K4B
View more